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This part of IEC 62804 defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID). Two test methods are defined that do not inherently produce equivalent results. They are given as screening tests - neither test includes all the factors existing in the natural environment that can affect the PID rate. The methods describe how to achieve a constant stress level.
Author | VDE |
---|---|
Editor | VDE |
Document type | Standard |
Format | Paper |
ICS | 27.160 : Solar energy engineering
|
Number of pages | 14 |
Replace | DIN EN 62804 (2013-10) |
Cross references | IEC/TS 62804-1 (2015-08), IDT
|
Weight(kg.) | 0.1238 |
Year | 2017 |
Document history | DIN IEC/TS 62804-1 (2017-05) |
Country | Germany |
Keyword | DIN IEC/TS 62804;62804 |